Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates
Identifieur interne : 00A493 ( Main/Repository ); précédent : 00A492; suivant : 00A494Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates
Auteurs : RBID : Pascal:04-0184209Descripteurs français
- Pascal (Inist)
- 6855L, 6172F, 7220F, 7350D, 7340K, 7220J, 7350G, 7855C, 7866F, 8115G, 6172S, Etude expérimentale, Indium composé, Porteur minoritaire, Durée vie porteur charge, Gallium composé, Gallium arséniure, Zinc, Semiconducteur III-V, Hétérojonction semiconducteur, Couche épitaxique semiconductrice, Densité dislocation, Mobilité électron, Temps relaxation électron, Revêtement MOCVD, Photoluminescence, Distribution impureté, Recombinaison électron trou.
- Wicri :
- concept : Zinc.
English descriptors
- KwdEn :
- Carrier lifetime, Dislocation density, Electron mobility, Electron relaxation time, Electron-hole recombination, Experimental study, Gallium arsenides, Gallium compounds, III-V semiconductors, Impurity distribution, Indium compounds, MOCVD coatings, Minority carriers, Photoluminescence, Semiconductor epitaxial layers, Semiconductor heterojunctions, Zinc.
Abstract
The minority carrier lifetime of electrons (τn) in p-type GaAs double heterostructures grown on GaAs substrates and compositionally graded Ge/Si1-xGex/Si (SiGe) substrates with varying threading dislocation densities (TDDs) were measured at room temperature using time-resolved photoluminescence. The electron lifetimes for homoepitaxial GaAs and GaAs grown on SiGe (TDD∼1×106 cm-2) with a dopant concentration of 2×1017 cm-3 were ∼21 and ∼1.5 ns, respectively. The electron lifetime measured on SiGe was substantially lower than the previously measured minority carrier hole lifetime (τp) of ∼10 ns, for n-type GaAs grown on SiGe substrates with a similar residual TDD and dopant concentration. The reduced lifetime for electrons is a consequence of their higher mobility, which yields an increased sensitivity to the presence of dislocations in GaAs grown on metamorphic buffers. The disparity in dislocation sensitivity for electron and hole recombination has significant implications for metamorphic III-V devices. © 2004 American Institute of Physics.
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Andre</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Ohio</region></placeName><wicri:cityArea>Department of Electrical Engineering, The Ohio State University, Columbus</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Photovoltaic and Space Environment Branch, NASA Glenn Research Center at Lewis Field, Cleveland, Ohio 44135</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Ohio</region></placeName><wicri:cityArea>Photovoltaic and Space Environment Branch, NASA Glenn Research Center at Lewis Field, Cleveland</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, Golden</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Ohio</region></placeName><wicri:cityArea>Department of Electrical Engineering, The Ohio State University, Columbus</wicri:cityArea></affiliation></author><author><name sortKey="Boeckl, J J" uniqKey="Boeckl J">J. J. Boeckl</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Ohio</region></placeName><wicri:cityArea>Department of Electrical Engineering, The Ohio State University, Columbus</wicri:cityArea></affiliation></author><author><name sortKey="Wilt, D M" uniqKey="Wilt D">D. M. Wilt</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Ohio</region></placeName><wicri:cityArea>Department of Electrical Engineering, The Ohio State University, Columbus</wicri:cityArea></affiliation></author><author><name sortKey="Pitera, A J" uniqKey="Pitera A">A. J. Pitera</name></author><author><name sortKey="Lee, M L" uniqKey="Lee M">M. L. Lee</name></author><author><name sortKey="Fitzgerald, E A" uniqKey="Fitzgerald E">E. A. Fitzgerald</name></author><author><name sortKey="Keyes, B M" uniqKey="Keyes B">B. M. Keyes</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Ohio</region></placeName><wicri:cityArea>Department of Electrical Engineering, The Ohio State University, Columbus</wicri:cityArea></affiliation></author><author><name sortKey="Ringel, S A" uniqKey="Ringel S">S. A. Ringel</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Ohio</region></placeName><wicri:cityArea>Department of Electrical Engineering, The Ohio State University, Columbus</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0184209</idno><date when="2004-05-03">2004-05-03</date><idno type="stanalyst">PASCAL 04-0184209 AIP</idno><idno type="RBID">Pascal:04-0184209</idno><idno type="wicri:Area/Main/Corpus">00B989</idno><idno type="wicri:Area/Main/Repository">00A493</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier lifetime</term><term>Dislocation density</term><term>Electron mobility</term><term>Electron relaxation time</term><term>Electron-hole recombination</term><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Impurity distribution</term><term>Indium compounds</term><term>MOCVD coatings</term><term>Minority carriers</term><term>Photoluminescence</term><term>Semiconductor epitaxial layers</term><term>Semiconductor heterojunctions</term><term>Zinc</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6855L</term><term>6172F</term><term>7220F</term><term>7350D</term><term>7340K</term><term>7220J</term><term>7350G</term><term>7855C</term><term>7866F</term><term>8115G</term><term>6172S</term><term>Etude expérimentale</term><term>Indium composé</term><term>Porteur minoritaire</term><term>Durée vie porteur charge</term><term>Gallium composé</term><term>Gallium arséniure</term><term>Zinc</term><term>Semiconducteur III-V</term><term>Hétérojonction semiconducteur</term><term>Couche épitaxique semiconductrice</term><term>Densité dislocation</term><term>Mobilité électron</term><term>Temps relaxation électron</term><term>Revêtement MOCVD</term><term>Photoluminescence</term><term>Distribution impureté</term><term>Recombinaison électron trou</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Zinc</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The minority carrier lifetime of electrons (τ<sub>n</sub>) in p-type GaAs double heterostructures grown on GaAs substrates and compositionally graded Ge/Si<sub>1-x</sub>Ge<sub>x</sub>/Si (SiGe) substrates with varying threading dislocation densities (TDDs) were measured at room temperature using time-resolved photoluminescence. The electron lifetimes for homoepitaxial GaAs and GaAs grown on SiGe (TDD∼1×10<sup>6</sup> cm<sup>-2</sup>) with a dopant concentration of 2×10<sup>17</sup> cm<sup>-3</sup> were ∼21 and ∼1.5 ns, respectively. The electron lifetime measured on SiGe was substantially lower than the previously measured minority carrier hole lifetime (τ<sub>p</sub>) of ∼10 ns, for n-type GaAs grown on SiGe substrates with a similar residual TDD and dopant concentration. The reduced lifetime for electrons is a consequence of their higher mobility, which yields an increased sensitivity to the presence of dislocations in GaAs grown on metamorphic buffers. The disparity in dislocation sensitivity for electron and hole recombination has significant implications for metamorphic III-V devices. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>18</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates</s1></fA08><fA11 i1="01" i2="1"><s1>ANDRE (C. L.)</s1></fA11><fA11 i1="02" i2="1"><s1>BOECKL (J. J.)</s1></fA11><fA11 i1="03" i2="1"><s1>WILT (D. M.)</s1></fA11><fA11 i1="04" i2="1"><s1>PITERA (A. J.)</s1></fA11><fA11 i1="05" i2="1"><s1>LEE (M. L.)</s1></fA11><fA11 i1="06" i2="1"><s1>FITZGERALD (E. A.)</s1></fA11><fA11 i1="07" i2="1"><s1>KEYES (B. M.)</s1></fA11><fA11 i1="08" i2="1"><s1>RINGEL (S. A.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>Photovoltaic and Space Environment Branch, NASA Glenn Research Center at Lewis Field, Cleveland, Ohio 44135</s1></fA14><fA14 i1="03"><s1>Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="04"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1></fA14><fA14 i1="05"><s1>Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210</s1></fA14><fA20><s1>3447-3449</s1></fA20><fA21><s1>2004-05-03</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0184209</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The minority carrier lifetime of electrons (τ<sub>n</sub>) in p-type GaAs double heterostructures grown on GaAs substrates and compositionally graded Ge/Si<sub>1-x</sub>Ge<sub>x</sub>/Si (SiGe) substrates with varying threading dislocation densities (TDDs) were measured at room temperature using time-resolved photoluminescence. The electron lifetimes for homoepitaxial GaAs and GaAs grown on SiGe (TDD∼1×10<sup>6</sup> cm<sup>-2</sup>) with a dopant concentration of 2×10<sup>17</sup> cm<sup>-3</sup> were ∼21 and ∼1.5 ns, respectively. The electron lifetime measured on SiGe was substantially lower than the previously measured minority carrier hole lifetime (τ<sub>p</sub>) of ∼10 ns, for n-type GaAs grown on SiGe substrates with a similar residual TDD and dopant concentration. The reduced lifetime for electrons is a consequence of their higher mobility, which yields an increased sensitivity to the presence of dislocations in GaAs grown on metamorphic buffers. 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